- Fast Read Access Time ? 150 ns
- Automatic Page Write Operation
* Internal Address and Data Latches for 64 Bytes
* Internal Control Timer
- Fast Write Cycle Times
* Page Write Cycle Time: 3 ms or 10 ms Maximum
* 1 to 64-byte Page Write Operation
- Low Power Dissipation
* 50 mA Active Current
* 200 μA CMOS Standby Current
- Hardware and Software Data Protection
- DATA Polling for End of Write Detection
- High Reliability CMOS Technology
* Endurance: 104 or 105 Cycles
* Data Retention: 10 Years
- Single 5V?10% Supply
- CMOS and TTL Compatible Inputs and Output
Untuk informasi lebih lanjut, lihat penjelasan produk ini di data sheet. |
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