Rp55.000,00

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Cha
[015-1024]

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Cha
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
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