• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
For more information, please visit this products data sheet. |
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